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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 2.2A SOT26
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：2.2A (Ta)
- Rds On (Max) @ Id, Vgs：140mOhm @ 2.2A, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15.23nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：882.51pF @ 6V
- Power - Max：1.15W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6
- Supplier Device Package：SOT-26
- Grade：-
- Qualification：-
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Overview
The TSM3911DCX6 RFG is a dual P-channel power MOSFET manufactured by Taiwan Semiconductor Corporation. It features a maximum drain-source voltage of -20V and a continuous drain current of -2.2A. The device is housed in an SOT-26 surface-mount package, designated as SOT-23-6 in some documentation. Key electrical parameters include a gate-source threshold voltage of 950mV at a drain current of 250µA. The component supports a thermal dissipation capacity of 1.15W and is available in a reel quantity of 3,000 pieces on a 7-inch tape.
Feature Summary
- Dual P-channel configuration for compact circuit integration
- Surface-mount design utilizing the SOT-26 package
- RoHS compliant and halogen-free construction
Applications
- Battery protection circuits
- Power management systems
- Load switching applications
Procurement Notes
Verify the specific ordering suffix to confirm the presence of the 'RFG' designation, which indicates RoHS compliance and halogen-free status. Ensure the required packaging format matches the standard 3,000-piece reel specification. Cross-reference the manufacturer part number with distributor SKUs to confirm availability and authenticity before finalizing procurement orders.
Selection Notes
Select this component when a dual P-channel solution is required within a small footprint. The -20V rating suits low-voltage battery-powered devices. Consider the SOT-26 package constraints for thermal management, noting the 1.15W dissipation limit. Verify that the gate threshold voltage aligns with the control logic levels of the target application circuit.
Part Context
This component belongs to the TSM3911 series of dual MOSFETs from Taiwan Semiconductor. Variants such as TSM3911DCX6 exist without the RFG suffix, potentially differing in packaging or compliance certifications. The series provides integrated dual-channel solutions for space-constrained electronic designs requiring efficient power switching capabilities.
Replacement Considerations
Direct substitutes include other dual P-channel MOSFETs in the SOT-26 package with comparable -20V and -2.2A ratings. Verify pinout compatibility and electrical specifications against the original datasheet before substitution.
