Single FETs, MOSFETs TSM60NC196CIT C0G product image

TSM60NC196CIT C0G

$0.97
  • Description:600V, 12A, SINGLE N-CHANNEL HIGH
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tube

SKU:f8d4c6545b25 Category: Brand:

  
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TSM60NC196CIT C0G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is 600V, 12A, SINGLE N-CHANNEL HIGH. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for TSM60NC196CIT C0G

  • Description:600V, 12A, SINGLE N-CHANNEL HIGH
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:196mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id:5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1506 pF @ 300 V
  • FET Feature:-
  • Power Dissipation (Max):74W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:ITO-220TL
  • Package / Case:TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for TSM60NC196CIT C0G

TSM60NC196CIT C0G

Single FETs, MOSFETs Overview

The TSM60NC196CIT C0G is an N-channel enhancement mode power MOSFET manufactured by Taiwan Semiconductor. It utilizes Super-Junction technology to achieve high performance with a low figure-of-merit. The device features a maximum drain-source voltage of 600V and a continuous drain current of 18A. Key electrical parameters include a maximum on-resistance of 196mΩ, a gate charge of 24nC, and a typical avalanche energy rating of 213mJ. It operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

  • Super-Junction technology for optimized switching performance
  • High ruggedness and commutation capabilities
  • Low figure-of-merit for improved efficiency

Single FETs, MOSFETs Applications

  • Power supply systems
  • Lighting applications

Single FETs, MOSFETs Procurement Notes

Verify the exact part number against official manufacturer documentation to ensure correct suffix identification. Confirm package type and thermal specifications match design requirements. Check RoHS compliance status as indicated in the datasheet. Validate pinout configuration before integration into PCB layouts.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high voltage handling and efficient switching. Consider the 600V rating for mains-connected or industrial applications. Evaluate thermal management needs based on the 18A current capability and package type. Ensure gate drive circuits support the specified gate charge characteristics.

Single FETs, MOSFETs Part Context

This part belongs to Taiwan Semiconductor's 600V N-channel Power MOSFET lineup. It shares architectural similarities with other Super-Junction devices in the series, such as the TSM60NB190CM2RNG, but differs in packaging and specific parameter optimization. The family emphasizes high reliability and performance for general-purpose power switching.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include other 600V, 18A N-channel MOSFETs with similar Rds(on) values. Verify pin compatibility and thermal resistance when considering alternatives from other manufacturers.

TSM60NC196CIT C0GTSM60NC196CIT C0G
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