TSM8588CS

$0.55

Description：MOSFET N/P-CH 60V 2.5A 8SOP
Series：-

SKU:7b6cd9771c9b Category: FET, MOSFET Arrays Brand: Taiwan Semiconductor Corporation

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 60V 2.5A 8SOP
Series：-
Mfr：Taiwan Semiconductor Corporation
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：2.5A (Ta), 5A (Tc), 2A (Ta), 4A (Tc)
Rds On (Max) @ Id, Vgs：103mOhm @ 2.5A, 10V, 180mOhm @ 2A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9.4nC @ 10V, 9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：527pF @ 30V, 436pF @ 30V
Power - Max：1.4W (Ta), 5.7W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOP
Grade：-
Qualification：-

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TSM8588CS

Overview

The TSM8588CS is an N/P-channel complementary MOSFET array manufactured by Taiwan Semiconductor Corporation. It features a 60V drain-source voltage (Vdss) and operates in an 8-SOP surface-mount package. The device supports continuous drain currents of 2.5A at ambient temperature and 5A at case temperature for the N-channel, with corresponding P-channel ratings of 2A (Ta) and 4A (Tc). Key electrical parameters include a maximum gate threshold voltage of 2.5V at 250µA, a maximum gate charge of 9.4nC at 10V, and an input capacitance of 527pF at 30V. On-resistance values are specified as 103mΩ at 2.5A/10V and 180mΩ at 2A/10V. Power dissipation reaches 1.4W at ambient temperature and 5.7W at case temperature, with a junction temperature range of -55°C to 150°C.

Feature Summary

Complementary N-Channel and P-Channel Configuration
Surface Mount 8-SOP Packaging
High Current Handling Capability

Applications

DC-DC Converter Synchronous Rectification
Motor Control Driver Circuits
Power Management Switching Applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer prior to finalizing procurement orders.

Selection Notes

Select this component based on its 60V voltage rating and dual-channel architecture suitable for bridge or half-bridge topologies. Evaluate thermal management requirements against the 1.4W (Ta) and 5.7W (Tc) power dissipation limits. Ensure gate drive voltages align with the 10V test conditions for optimal on-resistance performance.

Part Context

This part belongs to the TSM8588 series of complementary MOSFET arrays from Taiwan Semiconductor. It serves as a discrete solution for applications requiring matched N-type and P-type switching characteristics within a compact footprint, replacing discrete single-transistor implementations in space-constrained designs.