TT8K11TCR

$0.68

Description：MOSFET 2N-CH 30V 3A 8TSST
Series：-

SKU:643e9ea2439c Category: FET, MOSFET Arrays Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 3A 8TSST
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：3A
Rds On (Max) @ Id, Vgs：71mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：2.5V @ 1A
Gate Charge (Qg) (Max) @ Vgs：2.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds：140pF @ 10V
Power - Max：1W
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SMD, Flat Leads
Supplier Device Package：8-TSST
Grade：-
Qualification：-

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TT8K11TCR

Overview

The TT8K11TCR is a dual N-channel silicon MOSFET manufactured by ROHM Semiconductor, designed for low-voltage drive applications. It features a TSST-8 surface-mount package with two independent channels. Key electrical parameters include a drain-source breakdown voltage (Vdss) of 20 V and a continuous drain current (Id) of 2.5 A. The device exhibits a typical on-state resistance (Rds(on)) of 49 mΩ at a gate-source voltage (Vgs) of 4.5 V. Additional specifications include a gate charge (Qg) of 12 nC at 4.5 V, a threshold voltage (Vgs(th)) of 1 V, and a maximum power dissipation (Pd) of 650 mW. The component supports an operating temperature range from -55°C to +150°C.

Feature Summary

Optimized for low voltage drive circuits with a specified threshold voltage of 1 V.
Provides fast switching performance combined with low on-state resistance.
Integrates two independent N-channel MOSFETs within a compact surface-mount footprint.

Applications

DC-DC converter switching circuits
Motor driver interfaces
General-purpose power supply regulation

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm RoHS compliance status through the relevant datasheet revision. Cross-reference the component code with authorized distributor catalogs to validate authenticity and traceability before finalizing procurement orders.

Selection Notes

Select this component when a dual N-channel configuration is required for space-constrained designs. Ensure the application voltage remains below the 20 V drain-source limit. Verify that the thermal management strategy accommodates the 650 mW power dissipation rating under expected load conditions.

Part Context

This part belongs to ROHM's series of logic-level MOSFETs intended for portable electronics and battery-powered devices. The TSST-8 package provides a balance between thermal performance and board space efficiency. It serves as a discrete solution for driving loads in systems requiring low control voltages.