TTA1713-Y,LF

$0.20

Description：TRANS PNP 45V 0.5A S-MINI
Series：-

SKU:68c0bad43b3e Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

TTA1713-Y,LF is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 45V 0.5A S-MINI. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for TTA1713-Y,LF

Description：TRANS PNP 45V 0.5A S-MINI
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：PNP
Current - Collector (Ic) (Max)：500 mA
Voltage - Collector Emitter Breakdown (Max)：45 V
Vce Saturation (Max) @ Ib, Ic：400mV @ 50mA, 500mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 100mA, 1V
Power - Max：200 mW
Frequency - Transition：80MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：S-Mini
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for TTA1713-Y,LF

TTA1713-Y,LF

Single Bipolar Transistors Overview

The TTA1713 is a silicon PNP epitaxial type bipolar transistor manufactured by Toshiba Semiconductor and Storage. It operates with collector-base, collector-emitter, and emitter-base voltages of -50 V, -45 V, and -5 V respectively. The device supports a maximum collector current of -500 mA and base current of -50 mA. DC current gain (hFE) ranges from 120 to 390 depending on the rank. Transition frequency is typically 80 MHz at -10 mA collector current. The component is housed in an S-Mini package.

Single Bipolar Transistors Feature Summary

PNP epitaxial silicon construction for low-frequency power amplification
S-Mini surface-mount packaging for compact circuit integration
Defined hFE ranking system for consistent gain performance

Single Bipolar Transistors Applications

Low-frequency power amplifiers

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank suffix (Y or GR) required for your design, as this determines the minimum gain threshold. Confirm RoHS compliance status directly with the manufacturer or authorized distributor before finalizing procurement. Ensure the ordering code matches the exact electrical characteristics needed for the target application.

Single Bipolar Transistors Selection Notes

Select the Y rank for applications requiring a minimum hFE of 120, or the GR rank for a minimum hFE of 180. Consider the -45 V collector-emitter voltage limit when designing circuits with higher supply rails. Verify thermal dissipation requirements against the 200 mW power rating under specified board conditions.

Single Bipolar Transistors Part Context

This component belongs to Toshiba's lineup of small-signal and power bipolar junction transistors designed for general-purpose amplification and switching. The S-Mini package offers a compact footprint suitable for modern consumer electronics and industrial control boards where space constraints are critical.