UF28100H

Overview

The UF28100H is an RF power MOSFET transistor manufactured by MACOM Technology Solutions. It is designed for the UHF band, operating within a frequency range of 100 MHz to 500 MHz. The device utilizes silicon N-channel technology and is rated for a drain-source voltage of 28 V with a maximum rating of 65 V. It delivers an output power of 100 W and provides a gain of 10 dB. The component is housed in a 4-lead flange package suitable for base mounting.

Feature Summary

• High-power RF performance optimized for the UHF band
• Silicon N-channel MOSFET construction
• Designed for robust base mounting applications

Applications

• UHF band RF power amplification
• Military communication systems
• Broadcaster transmitter stages

Procurement Notes

Verify the specific suffix designation against the manufacturer's current datasheet to confirm pinout and thermal characteristics. Ensure the procurement channel sources directly from authorized MACOM distributors or TE Connectivity to guarantee authenticity. Cross-reference the part marking with official documentation to prevent substitution errors during assembly.

Selection Notes

Select this component when designing circuits requiring 100 W output power within the 100 MHz to 500 MHz spectrum. Consider the 4-lead flange package for thermal management requirements associated with high-power dissipation. Evaluate the 28 V operating voltage against system supply constraints and ensure compatibility with existing bias networks.

Part Context

This device belongs to the UF28100 family of RF power transistors produced by MACOM. Variants such as the UF28100M and UF28100V exist within the same product line, offering different packaging options like surface mount configurations. The UF28100H specifically denotes the through-hole flange version intended for high-power base-mounted applications.

Replacement Considerations

Direct substitutes include other MACOM UF28100 series variants such as the UF28100M or UF28100V, provided the mechanical footprint and mounting style differences are accommodated in the design.