UF28100V

UF28100V

$223.13
  • Description:RF MOSFET N-CHANNEL 28V 8L-FLG
  • Series:-

SKU:4e2465434b4f Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET N-CHANNEL 28V 8L-FLG
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Frequency:100MHz ~ 500MHz
  • Gain:10dB
  • Voltage - Test:28 V
  • Current Rating (Amps):12A
  • Noise Figure:-
  • Current - Test:600 mA
  • Power - Output:100W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:8L-FLG
  • Supplier Device Package:8L-FLG
  • Configuration:N-Channel

Download product information

UF28100V

Overview

The UF28100V is an N-channel enhancement mode RF MOSFET transistor manufactured by MACOM Technology Solutions. It utilizes a DMOS structure and operates within the 100 MHz to 500 MHz frequency range. The device provides 100 W of saturated output power at a 28 V drain-source voltage. Key electrical characteristics include a drain-source breakdown voltage of 65 V, a continuous drain current of 12 A per side, and a forward transconductance of 1.5 S. It achieves a power gain of 10 dB and a drain efficiency of 50% at 500 MHz. The component supports a load mismatch tolerance up to 30:1 VSWR.

Feature Summary

  • N-channel enhancement mode device with DMOS structure
  • Lower capacitances for broadband operation
  • High saturated output power capability
  • Lower noise figure than competitive devices

Applications

  • Broadband RF power amplification
  • Military communication systems
  • Electronic warfare applications

Procurement Notes

Verify the specific datasheet revision (Rev. V1) matches your design requirements before procurement. Confirm that the package type and pinout align with your test fixture assembly schematic. Ensure thermal management solutions accommodate the specified junction temperature and thermal resistance limits during operation.

Selection Notes

Select this component when designing circuits requiring high power output in the UHF band. Consider the 28 V operating voltage and 12 A current rating for power supply sizing. Evaluate the input and output impedances provided in the datasheet for matching network design. Verify compatibility with push-pull configurations as indicated in performance curves.

Part Context

This part belongs to the MACOM RF Power MOSFET Transistor family designed for high-power UHF applications. It is distinct from lower power variants like the UF2805B or UF2815B due to its 100 W output capability. The 'V' suffix denotes a specific package and revision variant within the broader UF28100 series.

Replacement Considerations

Public confirmed substitute part numbers are not available in the verified documentation.

FAQ

What is the maximum load mismatch tolerance?

The device supports a load mismatch tolerance of up to 30:1 VSWR.

Is this device suitable for medical applications?

No, MACOM products are not intended for use in medical, lifesaving, or life-sustaining applications.

What is the typical gate threshold voltage range?

The gate threshold voltage ranges from 2.0 V to 6.0 V under standard test conditions.

UF28100VUF28100V
$223.13
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