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The UF28100V is an N-channel enhancement mode RF MOSFET transistor manufactured by MACOM Technology Solutions. It utilizes a DMOS structure and operates within the 100 MHz to 500 MHz frequency range. The device provides 100 W of saturated output power at a 28 V drain-source voltage. Key electrical characteristics include a drain-source breakdown voltage of 65 V, a continuous drain current of 12 A per side, and a forward transconductance of 1.5 S. It achieves a power gain of 10 dB and a drain efficiency of 50% at 500 MHz. The component supports a load mismatch tolerance up to 30:1 VSWR.
Verify the specific datasheet revision (Rev. V1) matches your design requirements before procurement. Confirm that the package type and pinout align with your test fixture assembly schematic. Ensure thermal management solutions accommodate the specified junction temperature and thermal resistance limits during operation.
Select this component when designing circuits requiring high power output in the UHF band. Consider the 28 V operating voltage and 12 A current rating for power supply sizing. Evaluate the input and output impedances provided in the datasheet for matching network design. Verify compatibility with push-pull configurations as indicated in performance curves.
This part belongs to the MACOM RF Power MOSFET Transistor family designed for high-power UHF applications. It is distinct from lower power variants like the UF2805B or UF2815B due to its 100 W output capability. The 'V' suffix denotes a specific package and revision variant within the broader UF28100 series.
Public confirmed substitute part numbers are not available in the verified documentation.
The device supports a load mismatch tolerance of up to 30:1 VSWR.
No, MACOM products are not intended for use in medical, lifesaving, or life-sustaining applications.
The gate threshold voltage ranges from 2.0 V to 6.0 V under standard test conditions.