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Product Detailed Parameters
- Description：MOSFET 4P-CH 1200V 36A MODULE
- Series：-
- Mfr：onsemi
- Package：Bulk
- Technology：Silicon Carbide (SiC)
- Configuration：4 P-Channel (Full Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：36A (Tj)
- Rds On (Max) @ Id, Vgs：45mOhm @ 25A, 12V
- Vgs(th) (Max) @ Id：6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs：42.5nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds：1450pF @ 800V
- Power - Max：114W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Grade：-
- Qualification：-
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Overview
The UFB25SC12E1BC3N is a Silicon Carbide cascode JFET module by onsemi, housed in the E1B package. It integrates a SiC JFET with a low-voltage MOSFET to enable simple gate drive operation while leveraging fast SiC switching characteristics. Key electrical parameters include a maximum drain-source voltage of 1200V and a continuous drain current of 36A. The device features a maximum on-resistance of 45mΩ at 25A and 12V, with a maximum gate threshold voltage of 6V at 10mA. Gate charge is specified at a maximum of 42.5nC at 15V, supporting high-frequency power conversion applications.
Feature Summary
- Combines fast silicon carbide switching performance with simplified gate drive requirements through cascode configuration
- Delivers ultra-low gate charge for enhanced efficiency in hard-switching environments
- Provides excellent switching characteristics suitable for high-frequency power conversion systems
Applications
- Hard-switching power conversion circuits
- High-frequency power supply designs
- Industrial power electronics systems
Procurement Notes
Verify component authenticity using official onsemi documentation and part markings. Confirm the specific E1B module package variant matches design requirements. Check lead times as manufacturing schedules may vary. Ensure compatibility with thermal management solutions designed for this module form factor. Validate that the cascode architecture aligns with system gate drive capabilities before integration.
Selection Notes
Select this component when high voltage isolation and rapid switching are required without complex gate drive circuitry. The cascode topology simplifies control logic compared to bare SiC devices. Consider the 1200V rating for robustness against voltage transients. Evaluate thermal performance based on the 45mΩ on-resistance and expected load currents. Ensure the application benefits from reduced switching losses inherent to silicon carbide technology.
Part Context
This module belongs to onsemi's silicon carbide cascode JFET family, designed to merge the reliability of traditional MOSFET drivers with the superior performance of wide bandgap semiconductors. These devices target applications demanding high efficiency and compact power density. The E1B packaging facilitates integration into modular power systems where space constraints and thermal management are critical design factors.
Replacement Considerations
Consult official onsemi substitution guides for verified equivalents. Direct replacements must match the 1200V rating, E1B package dimensions, and cascode functionality. Verify that alternative components maintain comparable gate charge and on-resistance specifications to ensure system performance consistency.
