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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.25A UMT6
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：250mA (Ta)
- Rds On (Max) @ Id, Vgs：2.4Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id：2.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：15pF @ 25V
- Power - Max：150mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：UMT6
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The UM6K31NFHATCN is a dual N-channel MOSFET from ROHM Semiconductor, housed in a compact SOT-363 (UMT6) surface-mount package. It features a drain-source voltage of 60 V and a continuous drain current of 250 mA. The device is optimized for low-voltage operation with a typical drive voltage of 2.5 V. At this voltage, the on-resistance is typically 3 Ω. When driven at 4 V or 4.5 V, the resistance drops to 2.3 Ω and 2.1 Ω respectively. The component supports an operating temperature range from -55°C to +150°C and has a power dissipation rating of 150 mW.
Feature Summary
- Dual N-channel configuration within a single compact SMD package
- Optimized for low-voltage driving applications with 2.5 V gate threshold capability
- Automotive grade qualification compliant with AEC-Q101 standards
Applications
- Low-voltage signal switching circuits
- Battery-powered portable electronic devices
- Automotive electronics requiring AEC-Q101 qualified components
Procurement Notes
Verify the complete part number including the suffix to ensure correct packaging and automotive qualification status. Confirm that the specific revision matches the design requirements. Check official manufacturer documentation for the most current RoHS compliance details and recommended soldering profiles before integration into production lines.
Selection Notes
Select this component when space-constrained designs require dual switching functionality in a small footprint. Ensure the application logic provides sufficient gate drive voltage to achieve the desired on-resistance levels. Consider the 150 mW power dissipation limit and thermal management needs for the specific PCB layout and ambient conditions.
Part Context
This part belongs to ROHM's UM6K31N series of dual N-channel MOSFETs. It shares the same core electrical characteristics as the UM6K31NFHA but includes specific packaging or tape-and-reel specifications indicated by the suffix. The series is designed to provide low on-resistance in a minimal surface-mount form factor suitable for modern high-density circuit boards.
Replacement Considerations
Direct substitutes include the UM6K31NFHA, which shares identical electrical specifications and pinout. Verify that any alternative component meets the AEC-Q101 automotive qualification requirement if used in automotive applications. Ensure the replacement maintains the SOT-363 package dimensions for mechanical compatibility.
