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The UM6K33NTN is a dual N-channel MOSFET manufactured by ROHM Semiconductor, housed in a UMT6 (SOT-363) surface-mount package. It features a Drain-Source Voltage (Vds) of 50 V and a continuous Drain Current (Id) of 200 mA. The device has a typical Rds(on) of 1.6 Ω at Vgs = 4.5 V and 2.4 Ω at Vgs = 1.2 V. Gate-Source Voltage limits are ±8 V, with a threshold voltage of 1 V. Power dissipation is rated at 150 mW. Operating temperature ranges from -55 °C to +150 °C. Rise time is 6 ns, fall time is 55 ns, and minimum forward transconductance is 400 mS.
Verify the specific ordering suffix to confirm packaging format, such as tape and reel quantities. Ensure compatibility with RoHS directives and check for automotive qualification status if required for the target application. Confirm lead times and availability through authorized distributors prior to finalizing procurement plans.
Select this component when a dual N-channel solution is needed in a minimal footprint. Consider the 1.2 V drive requirement for low-power systems. Evaluate thermal constraints given the 150 mW power dissipation limit in the UMT6 package. Compare Rds(on) values against system current requirements to ensure acceptable conduction losses.
This part belongs to the UM6K33N series of composite MOSFETs designed for low-voltage applications. It integrates two independent N-channel MOSFETs into a single SOT-363 package, offering space savings compared to discrete components. The series targets consumer electronics and portable equipment where size and power efficiency are critical design parameters.
Check for direct pin-compatible alternatives with similar electrical specifications. Verify that substitute parts meet the same Vds, Id, and Rds(on) requirements. Ensure the replacement maintains the UMT6/SOT-363 package dimensions for mechanical fit.