UP0187B00L

Overview

The UP0187B00L is a dual N-channel silicon MOSFET in an SSMini5-F2 package. It features a drain-source voltage of 30V and a continuous drain current of 100mA at 25°C. The device incorporates a built-in gate protection diode for enhanced reliability. Key electrical parameters include a maximum RDS(on) of 8Ω at VGS=4V and ID=10mA, with a threshold voltage max of 1.5V. Total power dissipation is rated at 125mW, supporting operation up to a channel temperature of 125°C.

Feature Summary

• Dual elements integrated into a single compact package
• Built-in gate protection diode included
• High-speed switching capability
• SSMini type package reduces mounting area

Applications

• Switching circuits
• General electronic equipment
• Office equipment
• Communications equipment
• Measuring instruments

Procurement Notes

Verify the component status on the manufacturer's official website before procurement. The datasheet indicates this product falls under maintenance or discontinued categories. Confirm availability through authorized distributors and ensure the latest specifications are obtained prior to final design implementation.

Selection Notes

Select this component for low-voltage switching applications requiring high speed. Ensure the operating drain current remains within the 100mA limit and that the total power dissipation does not exceed 125mW. Verify that the gate-source voltage stays within the ±12V absolute maximum rating during transient states.

Part Context

This part corresponds to two 2SK3938 transistors combined in one package. It belongs to Panasonic's small signal field-effect transistor lineup designed for standard general-purpose electronics. The internal connection diagram defines five terminals for dual common-source configurations.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.