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The UPA1874BGR-9JG-E1-A is a dual N-channel power MOSFET from Renesas Electronics, housed in an 8-TSSOP package. It features an 8A drain current (ID), a 30V drain-source voltage (VDS), and a typical on-resistance of 0.0195 ohms. The device utilizes silicon metal-oxide semiconductor technology with two independent channels.
Verify the specific suffix 'BGR' against official Renesas documentation to confirm pinout and electrical characteristics match design requirements. Ensure the 8-TSSOP footprint aligns with PCB layout constraints. Confirm lead-free status and quality grade specifications directly from the manufacturer datasheet before procurement.
Select this component for low-voltage, high-current switching tasks requiring dual channel isolation. Evaluate thermal performance within the TSSOP package limits. Compare on-resistance values against system efficiency targets. Ensure voltage ratings exceed peak circuit transients.
This part belongs to Renesas' uPA1874 series of dual N-channel MOSFETs. It is designed for surface-mount applications where space efficiency and reliable switching are critical. The series supports various industrial and consumer use cases requiring robust power handling.
Check for direct substitutes like UPA1874GR-9JG-E1-A or UPA1872BGR-9JG-E1-A, ensuring identical pinouts and electrical parameters. Verify package compatibility and thermal characteristics before substitution.