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The UPA2350T1G-E4-A is a P-channel power MOSFET manufactured by Renesas Electronics Corporation. It is designed for high-efficiency switching applications in automotive and industrial environments. The device features a low on-resistance to minimize conduction losses and robust avalanche energy capability. Key electrical parameters include a drain-source voltage rating of -20V and a continuous drain current capacity optimized for load management. The component utilizes a surface-mount package suitable for automated assembly processes, ensuring reliable performance under thermal stress.
Verify the specific ordering suffix E4-A against the manufacturer's latest datasheet to confirm pinout and tape-and-reel specifications. Ensure compatibility with RoHS directives if required by the target application. Cross-reference the part number with authorized distributors to confirm authenticity and traceability before finalizing procurement orders.
Select this component when a P-channel MOSFET with a -20V rating is required for high-side switching. Evaluate the thermal resistance characteristics against the expected ambient temperature and duty cycle. Confirm that the gate drive voltage levels are compatible with the logic family used in the control circuitry to ensure full enhancement.
This component belongs to Renesas' automotive-grade power MOSFET portfolio, designed for reliability in harsh environments. It complements N-channel variants in complementary bridge configurations or single-ended high-side driver topologies commonly found in modern vehicle electronics and industrial automation equipment.
Consult the official replacement guide for direct equivalents. Verify pin-to-pin compatibility and electrical parameter margins before substituting with other P-channel devices from different manufacturers.