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Product Detailed Parameters
- Description：MOSFET 2N-CH 24V LGA
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：22nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.3W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：4-XFBGA
- Supplier Device Package：4-EFLIP-LGA (1.62x1.62)
- Grade：-
- Qualification：-
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Overview
The UPA2373T1P-E4-A is a dual N-channel MOSFET array manufactured by Renesas Electronics Corporation. Designed for lithium-ion battery protection circuits, this component utilizes an ecologically friendly flip-chip technology. It features a compact surface-mount package with dimensions of 1.62x1.62 mm in a 4-EFLIP-LGA configuration. The device supports a maximum power dissipation of 1.3W and is intended for applications requiring efficient current handling within small form factors.
Feature Summary
- Dual N-channel MOSFET array architecture
- Flip-chip packaging technology
- Optimized for battery protection applications
Applications
- Lithium-ion battery protection circuits
- Portable electronic device power management
- Compact consumer electronics power switches
Procurement Notes
Verify the specific ordering suffix E4-A against the manufacturer's latest documentation to ensure compatibility with current production standards. Confirm RoHS compliance status as indicated in official datasheets, noting that some sources may lack explicit environmental certification data. Cross-reference the part number with authorized distributors to validate authenticity and supply chain integrity before procurement.
Selection Notes
Select this component when space constraints require a flip-chip solution for dual N-channel switching. Consider its suitability for low-voltage battery protection tasks where thermal performance within a minimal footprint is critical. Evaluate the 1.3W power dissipation limit against system requirements to ensure adequate thermal headroom during operation.
Part Context
This part belongs to Renesas' uPA series of discrete semiconductors, which focuses on high-density packaging solutions. The UPA2373T1P-E4-A specifically addresses the need for reliable switching elements in portable devices. Its design aligns with industry trends toward miniaturization while maintaining robust electrical characteristics for battery management systems.
Replacement Considerations
Consult official cross-reference lists for direct substitutes. Verify pinout compatibility and electrical parameters if considering alternative dual MOSFET arrays from other manufacturers.
