SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The UPA2375T1P-E1-A is an N-channel enhancement mode MOSFET manufactured by Renesas Electronics Corporation. It features a maximum drain current of 8 A and a maximum power dissipation of 1.8 W. The device operates at temperatures up to 150 °C and utilizes a surface-mount metal-oxide semiconductor technology.
Verify the manufacturer datasheet for specific electrical characteristics and thermal limits before integration. Confirm RoHS compliance status and lead-free specifications with the supplier. Ensure the ordering suffix matches the required packaging format.
Select this component for designs requiring an 8 A continuous drain current capability within a compact surface-mount footprint. Evaluate thermal resistance parameters against the expected power dissipation of 1.8 W to ensure reliable operation at junction temperatures up to 150 °C.
This part belongs to the Renesas UPA237x series of N-channel MOSFETs. These devices are designed for general-purpose switching applications, offering a balance of current handling and low on-resistance in small packages suitable for portable electronics.
Consult official substitution guides for compatible N-channel MOSFETs with similar 8 A current ratings and 1.8 W power dissipation limits. Verify pinout compatibility and thermal performance metrics before replacing.