UPA2375T1P-E1-A

UPA2375T1P-E1-A

$0.74
  • Description:MOSFET 2N-CH 6-EFLIP-LGA
  • Series:-

SKU:26e5681feae5 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:MOSFET 2N-CH 6-EFLIP-LGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual) Common Drain
  • FET Feature:Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:1.75W
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-XFLGA
  • Supplier Device Package:6-EFLIP-LGA
  • Grade:-
  • Qualification:-

Download product information

UPA2375T1P-E1-A

Overview

The UPA2375T1P-E1-A is an N-channel enhancement mode MOSFET manufactured by Renesas Electronics Corporation. It features a maximum drain current of 8 A and a maximum power dissipation of 1.8 W. The device operates at temperatures up to 150 °C and utilizes a surface-mount metal-oxide semiconductor technology.

Feature Summary

  • N-channel enhancement mode operation
  • Surface-mount package configuration
  • Metal-oxide semiconductor construction

Applications

  • General-purpose switching applications
  • Low voltage power management circuits

Procurement Notes

Verify the manufacturer datasheet for specific electrical characteristics and thermal limits before integration. Confirm RoHS compliance status and lead-free specifications with the supplier. Ensure the ordering suffix matches the required packaging format.

Selection Notes

Select this component for designs requiring an 8 A continuous drain current capability within a compact surface-mount footprint. Evaluate thermal resistance parameters against the expected power dissipation of 1.8 W to ensure reliable operation at junction temperatures up to 150 °C.

Part Context

This part belongs to the Renesas UPA237x series of N-channel MOSFETs. These devices are designed for general-purpose switching applications, offering a balance of current handling and low on-resistance in small packages suitable for portable electronics.

Replacement Considerations

Consult official substitution guides for compatible N-channel MOSFETs with similar 8 A current ratings and 1.8 W power dissipation limits. Verify pinout compatibility and thermal performance metrics before replacing.

UPA2375T1P-E1-AUPA2375T1P-E1-A
$0.74
Buy Now