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The UPA2381AT1P-E1-A is an N-channel power MOSFET manufactured by Renesas Electronics. It features a maximum drain current of 8 A and a maximum power dissipation of 1.8 W. The device supports surface mount installation and operates at temperatures up to 150 °C. Classified under ECCN code EAR99, it complies with RoHS standards. The component utilizes metal-oxide semiconductor technology for efficient switching applications.
Verify the exact part number against official Renesas documentation to ensure compatibility with specific design requirements. Confirm RoHS compliance status and lead times through authorized distributors. Check for any recent lifecycle notices or obsolescence warnings before finalizing procurement plans.
Select this component based on its 8 A current rating and 1.8 W power dissipation limits. Ensure the application voltage does not exceed the device's maximum ratings. Consider the SMD package type for PCB layout constraints. Verify thermal management capabilities for the intended operating environment.
This part belongs to Renesas' discrete semiconductor transistor portfolio. It is designed for general-purpose power switching tasks. The product line focuses on providing reliable MOSFET solutions for various electronic systems. It complements other power management components in Renesas' catalog.
Consult official Renesas substitution guides for verified alternatives. Cross-reference pinouts and electrical parameters carefully. Ensure any substitute meets the same N-channel specification and current handling capabilities.