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Product Detailed Parameters
- Description：MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Tray
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The UPA2381T1P-E1-A is a single-channel N-channel power MOSFET manufactured by Renesas Electronics Corporation. It utilizes the Super Junction MOSFET technology to achieve low on-resistance and high-speed switching capabilities. The device features an 8-pin HVSON package with dimensions of 3mm x 3mm, designed for surface-mount applications. Key electrical parameters include a drain-source breakdown voltage (V_DSS) of 60V and a continuous drain current (I_D) of 45A at 25°C case temperature. The maximum gate-source voltage (V_GS) is rated at ±20V. The typical on-resistance (R_DS(on)) is 3.5mΩ at V_GS = 10V. The component operates within a junction temperature range of -55°C to +175°C and complies with RoHS standards.
Feature Summary
- Super Junction MOSFET structure for optimized performance
- Low thermal resistance for efficient heat dissipation
- Surface-mount compatible packaging design
Applications
- DC-DC converter circuits
- Motor driver applications
- Power supply unit output stages
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pin configuration and tape-and-reel specifications. Ensure that the requested quantity aligns with standard packaging formats provided by authorized distributors. Confirm compliance requirements such as RoHS status prior to finalizing procurement orders to meet regulatory standards.
Selection Notes
Select this component based on the required voltage rating of 60V and current handling capacity of 45A. Evaluate the thermal management requirements in the target application to ensure the HVSON package can dissipate heat effectively. Compare the on-resistance characteristics against alternative devices to optimize efficiency in power conversion systems.
Part Context
This part belongs to Renesas' discrete semiconductor portfolio, specifically within the power MOSFET category. It is engineered for general-purpose switching applications requiring high reliability and efficiency. The product line supports various industrial and consumer electronics designs where compact size and robust electrical performance are critical.
Replacement Considerations
Consult the official Renesas replacement guide or equivalent manufacturer cross-reference lists for verified substitutes. Ensure any alternative device matches the 60V/45A specification and HVSON footprint. Verify pin compatibility and electrical characteristics before implementing a substitute in existing designs.
