UPA2792AGR-E1-AT

$0.91

Description：MOSFET N/P-CH 30V 10A 8SOP
Series：-

SKU:ebb0a467c667 Category: FET, MOSFET Arrays Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 30V 10A 8SOP
Series：-
Mfr：Renesas Electronics Corporation
Package：Bulk
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：10A
Rds On (Max) @ Id, Vgs：12.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：2200pF @ 10V
Power - Max：2W
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerSOIC (0.173", 4.40mm Width)
Supplier Device Package：8-SOP
Grade：-
Qualification：-

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UPA2792AGR-E1-AT

Overview

The UPA2792AGR-E1-AT is a dual N-channel power MOSFET array manufactured by Renesas Electronics Corporation. It features a maximum drain-source voltage of 30V and a continuous drain current of 10A at 25°C. The device has a typical on-resistance of 12.5mΩ at 5A with a gate-source voltage of 10V. It is housed in an 8-PowerSOIC surface-mount package with a width of 4.40mm. The component supports a maximum operating junction temperature of 150°C and includes two independent channels within a single package.

Feature Summary

Dual N-channel configuration for compact circuit design
Low on-resistance for efficient power switching
Surface mount packaging for automated assembly

Applications

Industrial control systems
Consumer electronics power management
General-purpose switching applications

Procurement Notes

Verify the specific ordering suffix E1-AT to ensure compliance with lead-free and RoHS requirements as documented. Confirm the package type matches the 8-PowerSOIC specification. Check moisture sensitivity level ratings prior to soldering. Ensure the supplier provides valid datasheets from Renesas Electronics Corporation for technical validation.

Selection Notes

Select this component for applications requiring dual N-channel switching with low voltage operation. Consider the 30V rating and 10A current capacity for load management. Evaluate the thermal performance given the 2W power dissipation limit. Compare package dimensions against PCB layout constraints for the 8-SOP form factor.

Part Context

This part belongs to Renesas' power MOSFET portfolio, designed for general-purpose switching tasks. It complements other discrete semiconductors used in power conversion and signal routing. The product line focuses on reliability and efficiency for industrial and consumer markets.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing circuit designs before considering alternative components.