UPA677TB-T1-A

Overview

The UPA677TB-T1-A is a dual P-Channel MOSFET manufactured by Renesas Electronics. It features a drain-source breakdown voltage of 20 V and a continuous drain current of 250 mA. The device has a maximum on-resistance of 1.45 Ohms at a gate-source voltage of -4.5 V. It operates within a temperature range of -55°C to +150°C junction temperature. The component is housed in an SC-88-6 surface-mount package.

Feature Summary

• Dual P-Channel configuration for compact circuit design
• Enhancement mode operation with low threshold requirements
• High thermal stability suitable for demanding environments

Applications

• Low-side switching applications
• Power management circuits
• General-purpose transistor switching

Procurement Notes

Verify the specific ordering suffix and manufacturer documentation, as availability status may vary. Confirm RoHS compliance details through official datasheets before integration. Check for obsolescence notices or lifecycle changes directly from Renesas Electronics to ensure long-term supply viability.

Selection Notes

Select this component for designs requiring dual P-Channel switching in small packages. Ensure the load current remains below 250 mA and voltage does not exceed 20 V. Verify that the thermal dissipation capabilities align with the system's power budget and ambient temperature conditions.

Part Context

This part belongs to Renesas' discrete MOSFET portfolio, designed for general electronic applications. It complements other small-signal transistors in the lineup, offering a balance of performance and size for consumer and industrial electronics where space is constrained.

Replacement Considerations

Consult official substitution guides for compatible dual P-Channel MOSFETs in SC-88-6 packages. Verify pinout compatibility and electrical parameter equivalence before replacing.