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The UPA679TB-T1-A is a dual P-Channel enhancement-mode MOSFET manufactured by Renesas Electronics. It is housed in an SC-88-6 surface-mount package and utilizes silicon technology. The device features a drain-source breakdown voltage (Vds) of 20 V and a continuous drain current (Id) of 250 mA. The on-resistance (Rds(on)) is specified at 1.45 Ohms, with a gate-source voltage range of ±12 V. It operates within a temperature range of -55°C to +150°C junction temperature, with a power dissipation rating of 200 mW. Switching characteristics include a typical turn-on delay of 23 ns and turn-off delay of 50 ns.
Verify the component status as discontinued or obsolete through official Renesas channels before integration. Confirm availability of alternative sources if production continuity is required. Ensure RoHS compliance documentation is obtained from authorized distributors. Check for moisture sensitivity level handling requirements during storage and assembly processes.
Select this component for low-current applications requiring dual P-channel isolation in small form factors. Compare Rds(on) and thermal performance against similar SC-88-6 devices. Verify that the 250 mA current rating meets the specific load requirements. Consider the 20 V voltage limit for system compatibility.
This part belongs to Renesas' discrete transistor portfolio, specifically designed for general-purpose switching applications. It complements other small-signal MOSFETs in the company's catalog. The SC-88-6 package allows for high-density PCB layouts. Renesas focuses on reliability and automotive-grade standards for many of its semiconductor products.
Check for pin-compatible alternatives from Renesas or other manufacturers offering similar 20V dual P-channel specifications in SC-88-6 packages. Verify electrical parameter equivalence, particularly Rds(on) and Id ratings.