UPA800T-A

Overview

The UPA800T is a dual NPN silicon high-frequency transistor encapsulated in an ultra-small 6-pin SMT package. It contains two independently mounted transistors suitable for dual or cascode configurations. Key electrical parameters include a collector current of 35 mA, collector-emitter voltage of 10 V, and emitter-base voltage of 1.5 V. The device features a typical noise figure of 1.9 dB at 2 GHz and a gain bandwidth product of 8.0 GHz. Total power dissipation ratings are 110 mW for one die and 200 mW for the other.

Feature Summary

• Dual independent NPN transistors in a compact 2 mm x 1.25 mm package
• Low noise figure performance optimized for RF applications
• High gain characteristics with significant bandwidth capability
• Designed for low voltage bias and low current operation

Applications

• Pager circuits
• Hand-held wireless devices
• RF amplifier stages
• Oscillator circuits

Procurement Notes

Verify the specific ordering suffix when purchasing. The base part number UPA800T refers to the component itself. For tape and reel packaging, the designated part number is UPA800T-T1. Confirm that the received components match the required packaging format before integration into production lines.

Selection Notes

Select this component for designs requiring small form factor and low noise in the S-band range. Ensure biasing conditions remain within the specified collector-emitter voltage and current limits. Consider the thermal dissipation capabilities of the individual dies when designing the heat management strategy for the application.

Part Context

This component is manufactured by California Eastern Laboratories (CEL). It belongs to the family of RF bipolar transistors designed for high-frequency operations. The device utilizes silicon epitaxial technology to achieve its specified performance metrics in a surface-mount configuration.

Replacement Considerations

No direct public substitute part numbers are documented for this specific component. Designers should evaluate alternative dual NPN RF transistors based on matching package dimensions, frequency response, and noise figure requirements if sourcing becomes unavailable.