US6J2TR

Overview

The US6J2TR is a dual P-channel MOSFET designed for low-voltage drive applications, specifically optimized for operation at a gate-source voltage of -1.5V. Manufactured by ROHM Semiconductor, this component integrates two independent P-channel transistors within a compact surface-mount package to minimize footprint and parasitic inductance. It features a typical drain-source on-resistance of 0.48 ohms at -1.5V drive, ensuring efficient power handling in battery-powered systems. The device supports a drain current of -1.3A and operates within a temperature range of -55°C to +150°C, making it suitable for portable electronics requiring low standby currents.

Feature Summary

• Optimized for low-voltage drive circuits with enhanced performance at -1.5V gate-source bias
• Dual P-channel configuration integrated into a single small surface-mount package
• Designed for low standby current consumption in battery-operated devices

Applications

• Battery protection circuits for portable electronic devices
• Power supply management in mobile phones and handheld gadgets
• Load switching in low-voltage digital logic interfaces

Procurement Notes

Verify the specific ordering suffix to ensure the correct tape-and-reel quantity matches production requirements. Confirm RoHS compliance status through official datasheets before integration. Check for obsolescence notices as some low-drive variants may be designated for existing customers only. Validate package dimensions against PCB layout constraints to ensure proper thermal and mechanical fit during assembly.

Selection Notes

Select the US6J2TR when system design requires driving P-channel loads with logic levels near 1.5V rather than standard 3.3V or 5V rails. Compare total gate charge and on-resistance values against alternatives to ensure switching speed meets application needs. Ensure the selected package variant aligns with automated pick-and-place capabilities and available soldering profiles for the specific manufacturing line.

Part Context

This component belongs to ROHM's series of low-voltage drive complementary and single-type MOSFETs. These devices are engineered to replace traditional bipolar transistors or higher-voltage MOSFETs in modern ultra-low-power designs. The US6J2TR specifically addresses the trend toward lower battery voltages in consumer electronics, offering improved efficiency where standard logic-level parts fail to fully enhance.

FAQ

What is the maximum gate-source voltage rating for the US6J2TR?

The absolute maximum gate-source voltage is typically ±10V, although the device is optimized for continuous operation at -1.5V.

Does the US6J2TR include built-in protection features?

Standard documentation indicates it is a discrete dual MOSFET without integrated over-current or thermal shutdown protection circuits.

What is the typical output capacitance (Coss) for this device?

Specific capacitance values such as Ciss, Crss, and Coss are defined in the electrical characteristics table of the official datasheet and vary with Vds.