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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V/20V 1.5A TUMT6
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V, 20V
- Current - Continuous Drain (Id) @ 25°C：1.5A, 1A
- Rds On (Max) @ Id, Vgs：240mOhm @ 1.5A, 4.5V, 390mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 1mA, 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：2.2nC @ 4.5V, 2.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：80pF @ 10V, 150pF @ 10V
- Power - Max：1W
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：6-SMD, Flat Leads
- Supplier Device Package：TUMT6
- Grade：-
- Qualification：-
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Overview
The US6M2GTR is a complementary MOSFET pair integrated into a single SOT-363T package, designed for low-voltage drive applications. It features an N-channel and P-channel configuration with a drain-source voltage rating of 30V. The typical on-resistance is 0.24Ω at a 2.5V drive voltage. The device supports a continuous drain current of 1.5A and operates within a temperature range of -55°C to 150°C. Packaged in a TUMT6 form factor with 6 terminals, it is supplied in tape-and-reel quantities of 3000 units. This component is currently classified as not recommended for new designs.
Feature Summary
- Integrated complementary N+P MOSFET structure in a compact surface-mount package
- Optimized for low gate drive voltage operation at 2.5V
- Automotive-grade reliability with AEC-Q101 qualification
Applications
- DC-DC converter synchronous rectification
- Motor driver output stages
- Low-voltage load switch circuits
Procurement Notes
Verify the specific ordering suffix GTR confirms the tape-and-reel packaging format containing 3000 units per reel. Confirm RoHS compliance status and ensure the supply status remains acceptable for existing production lines, as this part is designated as not recommended for new designs. Cross-reference the package code SOT-363T dimensions against PCB footprint requirements.
Selection Notes
Select this component when a matched N-P MOSFET pair is required for synchronous switching applications driven by low voltage logic levels. Ensure the 30V breakdown voltage and 1.5A current rating meet the circuit demands. Consider the thermal dissipation capabilities within the small DFN2020L8 or equivalent package size if high power handling is needed.
Part Context
The US6M2 belongs to a family of complementary MOSFETs manufactured by ROHM Semiconductor. It serves as a direct replacement for older discrete pairs, simplifying PCB layout and reducing component count. The similar level part UT6MA3 offers comparable specifications but may differ in package type or electrical parameters, requiring careful datasheet comparison before substitution.
Replacement Considerations
The UT6MA3 is listed as a similar specification part. Verify pin compatibility and electrical parameter alignment, particularly Rds(on) values and package dimensions (SOT-363T vs DFN2020L8), before implementing any substitution in existing designs.
