UT6J3TCR1

Overview

The UT6J3TCR1 is a dual P-Channel enhancement mode MOSFET manufactured by ROHM Semiconductor. It utilizes silicon technology and is housed in a DFN-2020-8D surface-mount package. The device features a drain-source breakdown voltage (Vds) of 20 V and a continuous drain current (Id) of 2 A. Its typical on-resistance (Rds(on)) is 85 mOhms, with a gate-source voltage range of ±8 V and a threshold voltage (Vgs(th)) of 1 V. The total gate charge (Qg) is 8.5 nC. It operates within a temperature range of -55°C to +150°C, with a power dissipation rating of 2 W.

Feature Summary

• Dual P-Channel configuration for compact circuit integration
• Low on-resistance for efficient power switching
• Enhanced thermal stability up to 150°C junction temperature

Applications

• DC-DC converter circuits
• Motor driver interfaces
• Power management modules

Procurement Notes

Verify the specific ordering code UT6J3TCR1 against official ROHM documentation to ensure correct packaging and revision. Confirm RoHS compliance status through the manufacturer's latest specification sheet before finalizing procurement plans.

Selection Notes

Select this component when a dual P-Channel MOSFET with 20 V rating and 2 A current capacity is required. Ensure the DFN-2020-8D package fits the PCB layout constraints. Verify that the 85 mOhm on-resistance meets the thermal design requirements for the intended application load.

Part Context

This part belongs to the ROHM MOSFET family, specifically designed for surface-mount applications. It is categorized under transistors and serves as a solid-state switch. The DFN-2020-8D package provides a small footprint suitable for space-constrained electronic designs.

Replacement Considerations

Check for direct substitutes with identical pinout and electrical characteristics. Verify compatibility with existing PCB footprints if replacing during maintenance or redesign phases.