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The Microsemi Corporation UTV040 is an NPN bipolar RF transistor designed for high-frequency applications. It features a maximum collector-emitter breakdown voltage of 25V and a maximum collector current of 2.5A. The device operates within a frequency range of 470MHz to 860MHz, with a transition frequency specified in this band. It delivers a maximum power output of 25W and provides a gain of 9dB. The component utilizes a 55FT base terminal mount package and supports a junction temperature up to 200°C.
Verify the specific revision level and datasheet version before procurement, as component specifications may vary between manufacturing lots. Confirm that the 55FT package dimensions match the target board layout requirements. Ensure that the sourcing channel provides traceability documentation suitable for the intended application environment, particularly if military or aerospace standards are required.
Select the UTV040 when designing circuits requiring NPN RF performance within the 470MHz to 860MHz spectrum. Consider its 25W power handling capability and 25V voltage rating against the system's peak signal requirements. Evaluate the base terminal mount style against available cooling solutions and chassis constraints to ensure adequate thermal management during continuous operation.
This component belongs to the Microsemi Corporation lineup of discrete bipolar RF transistors. These devices are engineered for reliability in demanding electronic environments. The UTV040 specifically addresses needs for medium-power RF amplification where stable gain and wide bandwidth are critical parameters for system performance.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with any potential alternatives by cross-referencing pinout configurations, electrical ratings, and package dimensions against the original design specifications.