V10K60DU-M3/H

Diode Arrays Overview

The V10K60DU-M3/H is a high current density surface-mount Trench MOS Barrier Schottky rectifier manufactured by Vishay General Semiconductor. It features a dual separated cathode configuration within a FlatPAK 5 x 6 package. The device supports a maximum repetitive peak reverse voltage of 60 V and provides a total average forward current of 10 A (5 A per diode). Key electrical characteristics include a peak forward surge current of 100 A, a maximum junction temperature of 150 °C, and an ultra-low forward voltage drop of 0.48 V at 5 A. It meets MSL level 1 requirements.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology to achieve low forward voltage drop and reduced power losses for high efficiency operation.
• Features a dual separated cathode circuit configuration housed in a compact FlatPAK 5 x 6 surface-mount case.
• Complies with J-STD-020 standards for MSL level 1 and withstands a maximum peak reflow temperature of 260 °C.

Diode Arrays Applications

• Low voltage high frequency DC/DC converters
• Freewheeling diodes
• Polarity protection applications

Diode Arrays Procurement Notes

Verify the specific ordering suffix to confirm packaging details. The /H suffix indicates a 7-inch diameter plastic tape and reel with a base quantity of 1500 units. Confirm that the component meets RoHS compliance and halogen-free material requirements as specified for the -M3 designation before finalizing procurement orders.

Diode Arrays Selection Notes

Select this component for designs requiring high current density in a small footprint. Ensure the application operates within the 60 V reverse voltage limit and does not exceed the 150 °C maximum junction temperature. Verify thermal management capabilities against the junction-to-ambient thermal resistance specifications provided in the datasheet.

Diode Arrays Part Context

This part belongs to the V10K-DU series of high current density surface-mount Schottky rectifiers. It is designed to replace traditional standard recovery diodes in applications where lower forward voltage and higher switching efficiency are critical. The series utilizes advanced trench technology to minimize conduction losses while maintaining robust performance under high surge conditions.

Diode Arrays Replacement Considerations

V10K60DUHM3/H

Diode Arrays FAQ

What is the typical junction capacitance value?

The typical junction capacitance is 560 pF, measured at 4.0 V reverse bias and 1 MHz frequency.

Is this component qualified for automotive applications?

Yes, an AEC-Q101 qualified version is available with the HM3 ordering code suffix.

What is the maximum DC forward current rating per diode?

The maximum DC forward current is rated at 5 A per diode when mounted on an infinite heat sink.