VEC2303-TL-E

$0.21

Description：PCH+PCH 1.8V DRIVE SERIES
Series：*

SKU:db420dad6e5e Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：PCH+PCH 1.8V DRIVE SERIES
Series：*
Mfr：onsemi
Package：Bulk
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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VEC2303-TL-E

Overview

The VEC2303-TL-E is a P-channel silicon MOSFET designed for general-purpose switching applications. It features a drain-to-source voltage of -12V and supports a DC drain current of -4A with a peak pulse current of -16A. The device operates with a 1.8V drive capability, making it suitable for low-voltage systems. Key electrical parameters include an on-state resistance (RDS(on)) ranging from 37mΩ to 107mΩ depending on gate voltage and current conditions. Input capacitance is typically 940pF at -6V drain-source voltage. The component utilizes an SANYO VEC8 package with a mounting height of 0.75mm.

Feature Summary

Optimized for load switch applications
Supports 1.8V drive levels
Composite structure facilitates high-density mounting

Applications

Load switches
General-purpose switching devices

Procurement Notes

Verify the specific ordering suffix TL-E against official documentation to confirm tape-and-reel packaging details. Ensure the procurement channel sources directly from authorized distributors or the manufacturer to guarantee authenticity. Cross-reference the part number with the latest delivery specifications provided by the supplier to account for any potential updates.

Selection Notes

Select this component based on its -12V breakdown voltage and -4A continuous current rating. Evaluate the RDS(on) values at the intended operating gate-source voltages (-1.8V, -2.5V, or -4.5V) to ensure power dissipation limits are met. Consider the total gate charge and switching times for high-frequency performance requirements in the target circuit design.

Part Context

This component is manufactured by SANYO Electric Co., Ltd. Semiconductor Company. The datasheet identifies the product as a P-Channel Silicon MOSFET under ordering number ENN8259. The information reflects specifications available as of March 2005. The device is classified as a general-purpose switching device within the semiconductor catalog.