VEC2315-TL-H

Description：MOSFET 2P-CH 60V 2.5A SOT28
Series：-

SKU:cac70c377c08 Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 60V 2.5A SOT28
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：2.5A
Rds On (Max) @ Id, Vgs：137mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：420pF @ 20V
Power - Max：1W
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SMD, Flat Leads
Supplier Device Package：SOT-28FL/VEC8
Grade：-
Qualification：-

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VEC2315-TL-H

Overview

The VEC2315-TL-H is a dual P-channel power MOSFET manufactured by onsemi using trench technology. It features an 8-pin VEC8 (SOT-28FL) surface-mount package. The device provides a drain-source breakdown voltage of -60V and a continuous drain current of -2.5A. Maximum static drain-source on-resistance is specified at 137mΩ at VGS=-10V, 180mΩ at VGS=-4.5V, and 194mΩ at VGS=-4V. Total power dissipation reaches 1.0W when mounted on a ceramic substrate. Junction temperature maximum is 150°C.

Feature Summary

Dual P-channel configuration with low on-resistance optimized via trench technology
ESD diode-protected gate structure for enhanced reliability
Compatible with 4V drive logic levels

Applications

Motor driver circuits

Procurement Notes

Verify the specific ordering suffix to confirm packaging format. The TL suffix indicates tape and reel shipping in quantities of 3,000 units within the VEC8 package. Confirm RoHS compliance status through official documentation before finalizing procurement specifications.

Selection Notes

Select this component for applications requiring dual P-channel switching with low gate charge characteristics. Ensure the driving circuit can supply sufficient voltage to achieve the lowest on-resistance values. Verify thermal management requirements against the junction-to-ambient resistance rating for the target PCB layout.

Part Context

This part belongs to the VEC2315 family of power MOSFETs produced by onsemi. The product utilizes trench technology to minimize gate charge and on-resistance. The datasheet publication number is VEC2315/D, revised in October 2015.