VEC2610-TL-E

$0.20

Description：PCH+NCH 1.8V DRIVE SERIES
Series：*

SKU:864d6aa6d4ca Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：PCH+NCH 1.8V DRIVE SERIES
Series：*
Mfr：onsemi
Package：Bulk
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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VEC2610-TL-E

Overview

The onsemi VEC2610-TL-E is a dual-channel silicon MOSFET integrating an N-channel and a P-channel device in a single surface-mount package. The N-channel unit supports a drain current of 4.5 A with a maximum drain-to-source voltage of 20 V, while the P-channel unit handles -3 A at -20 V. Both channels feature low ON-resistance, with the N-channel reaching 42 mΩ at VGS=4V and the P-channel reaching 81 mΩ at VGS=-4.5V. Designed for 1.8V drive compatibility, the component operates within a channel temperature range up to 150°C and maintains a mounting height of 0.75mm.

Feature Summary

Integrates complementary N-channel and P-channel MOSFETs into a single compact package to facilitate high-density circuit mounting.
Optimized for inverter applications with low ON-resistance characteristics across both channel types.
Capable of operation with a 1.8V gate drive signal, supporting low-voltage control logic interfaces.

Applications

Inverter circuits
High-density switching modules

Procurement Notes

Verify the manufacturer origin carefully, as the original datasheet identifies SANYO Electric Co., Ltd. Confirm that the specific VEC2610-TL-E variant matches the required electrical parameters and physical dimensions before integration. Ensure compliance with the absolute maximum ratings regarding pulse currents and power dissipation limits during thermal design.

Selection Notes

Select this component when space constraints require a combined N-P channel solution in a low-profile form factor. The 1.8V drive capability makes it suitable for modern low-voltage logic systems. Evaluate the thermal management requirements based on the allowable power dissipation of 0.9 W per unit on a standard ceramic board.

Part Context

This component belongs to the general-purpose switching device category, originally developed by SANYO Electric Co., Ltd. It serves as a discrete power switch solution designed for applications requiring complementary switching actions within a confined footprint. The technology utilizes silicon MOSFET structures optimized for fast switching speeds and low conduction losses.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical specifications against alternative dual MOSFET packages if sourcing from different manufacturers.