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The VEC2616-TL-W-Z is a complementary dual Power MOSFET manufactured by onsemi using trench technology. It integrates an N-channel and P-channel device in a single low-profile SOT-28FL (VEC8) package. The N-channel component provides a drain-source voltage of 60V, a maximum DC drain current of 3A, and a typical on-resistance of 80mΩ at 10V gate drive. The P-channel counterpart offers -60V breakdown, -2.5A current capability, and a typical on-resistance of 137mΩ at -10V. Both channels feature ESD-protected gates and are designed for applications requiring low gate charge and low on-resistance.
Verify the specific ordering suffix to confirm packaging configuration. The TL suffix indicates tape and reel shipping. Confirm RoHS compliance and halogen-free status as stated in the datasheet. Ensure the part number matches the exact marking code required for assembly. Check the manufacturer's website for updated ordering information regarding any nomenclature changes.
Select this component when a compact complementary pair is needed for motor control or switching applications. The 60V rating suits low-voltage systems. Verify that the 3A and 2.5A current limits meet the load requirements. Consider the thermal resistance of 138.8°C/W when designing heat dissipation on ceramic substrates. Ensure the gate drive voltage aligns with the specified RDS(on) test conditions for optimal performance.
This device belongs to the VEC2616 family of complementary power MOSFETs from onsemi. It utilizes trench technology to achieve low on-resistance and gate charge characteristics. The product is available in the SOT-28FL package. Similar variants include the VEC2616-TL-H, which shares the same electrical specifications but differs in packaging quantity.
The VEC2616-TL-H is a confirmed substitute within the same family, offering identical electrical characteristics and package type. Verify that the replacement variant meets the specific tape and reel quantity requirements of the production line.