VMMK-1225-TR2G

Overview

The VMMK-1225 is a low noise E-pHEMT transistor operating from DC to 26.5 GHz, housed in a sub-miniature 0402 wafer scale package measuring 1mm x 0.5mm x 0.25mm. It utilizes 0.25 micron gate technology to achieve an ultra-low noise figure below 1dB from 500 MHz to 12 GHz. The device provides high dynamic range and gain while requiring only positive DC voltages for bias. Key specifications include a minimum noise figure of 0.87 dB, associated gain of 11 dB, +23 dBm output third-order intercept point, and +8 dBm output power at one dB compression.

Feature Summary

• Enhancement mode operation eliminates the need for negative gate bias voltage
• Wafer scale leadless package enables standard 0402 pick and place assembly
• Ultra-low noise figure performance across a wide frequency bandwidth

Applications

• WLAN and WiMax notebook computer, access point and mobile wireless applications
• DBS 10 to 13 GHz receivers
• VSAT and SATCOM 13 to 18 GHz systems
• 802.16 & 802.20 BWA systems
• General purpose discrete E-pHEMT for other ultra low noise applications

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging configuration. The datasheet lists VMMK-1225-BLKG for antistatic bags and VMMK-1225-TR1G for tape and reel containers. Confirm that the received component matches the intended quantity and container type required for the manufacturing process.

Selection Notes

Select this component for designs requiring a normally off enhancement mode device with minimal footprint. Ensure the circuit layout accommodates the specific land pattern dimensions provided in the datasheet. Verify that the biasing network supplies only positive DC voltages as the device does not require negative gate bias.

Part Context

Originally manufactured by Avago Technologies, this component represents an integration of E-pHEMT technology with a chip-scale package. Broadcom Inc. currently maintains the product portfolio following its acquisition of Avago. The device remains relevant for high-frequency RF front-end designs requiring compact form factors.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult official manufacturer resources for cross-reference information or updated product line replacements.

FAQ

Does the VMMK-1225 require a negative gate bias voltage?

No, the device is an enhancement mode pHEMT that is normally off and requires only positive DC voltages for bias.

What is the maximum channel temperature rating?

The absolute maximum rating for the channel temperature is +150°C.

How is the device packaged for surface mount assembly?

It is housed in a sub-miniature 0402 (1mm x 0.5mm) surface mount leadless package with a height of 0.25mm.