VQ1006P

Overview

The VQ1006P is an N-channel MOSFET manufactured by Vishay Siliconix. It features a silicon technology construction and operates in enhancement mode. The device has a maximum drain-source voltage of 90V and a continuous drain current of 0.3A. It is housed in a PDIP-SB-14 package designed for through-hole mounting. The component supports a maximum junction temperature of 150°C and offers a power dissipation rating of 0.8W.

Feature Summary

• N-channel enhancement mode operation
• Through-hole PDIP-SB-14 packaging
• Silicon-based semiconductor technology

Applications

• General-purpose switching circuits
• Low-power signal processing applications
• Industrial control modules

Procurement Notes

Verify the specific ordering suffix and manufacturing date code to ensure compliance with current environmental standards, as this component may be subject to end-of-life status. Confirm RoHS compliance details directly from the manufacturer's datasheet before procurement, as regulatory requirements vary by region and production batch.

Selection Notes

Select this component when a through-hole N-channel MOSFET with a 90V breakdown voltage and 0.3A current capacity is required. Ensure the application design accommodates the PDIP-SB-14 package dimensions and thermal constraints associated with its 0.8W power dissipation rating under expected operating conditions.

Part Context

The VQ1006P belongs to the VN0808L/LS and VQ1006P series from Vishay Siliconix. This series includes variants with different voltage ratings, such as the 80V VN0808L. The part is categorized under discrete transistors and MOSFETs within the broader Vishay product portfolio.

Replacement Considerations

The VN0808L is a related part within the same series offering similar functionality but with an 80V rating instead of 90V. Verify pin compatibility and electrical specifications against the original design requirements before substituting.