VRF141G

Overview

The VRF141G is an N-channel RF MOSFET transistor manufactured by Microchip Technology. It utilizes Silicon (Si) technology and is designed for high-frequency applications up to 175 MHz. The device features a drain-source breakdown voltage (Vds) of 80 V and a continuous drain current (Id) of 20 A. It delivers an output power of 150 W with a gain of 22 dB. The component operates within a temperature range of -65°C to +150°C and uses a screw mount installation style.

Feature Summary

• N-channel silicon construction optimized for radio frequency amplification
• High output power capability at specified operating frequencies
• Robust thermal performance across extended industrial temperature ranges

Applications

• RF power amplification circuits
• Broadband amplifier stages
• Industrial RF equipment

Procurement Notes

Verify the exact part number suffix against official Microchip documentation, as distributor listings may contain typos or generic placeholders. Confirm that the specific revision matches the required electrical characteristics and package type before procurement. Ensure compatibility with existing thermal management solutions due to the screw-mount configuration.

Selection Notes

Select this component when designing circuits requiring 80 V breakdown and 150 W output power at frequencies around 175 MHz. Consider the 20 A continuous current rating and the necessity for screw-mount thermal interfaces. Evaluate the -65°C to +150°C operating range against environmental constraints.

Part Context

This device belongs to the VRF series of RF MOSFET transistors from Microchip Technology. These components are engineered for robust performance in demanding radio frequency environments, offering a balance of high power handling and frequency response suitable for various amplification tasks.

Replacement Considerations

Publicly confirmed substitute part numbers for VRF141G were not found in the provided source material. Consult official Microchip resources for potential cross-references.