VRF148A

VRF148A

$31.10
  • Description:RF MOSFET 50V M113
  • Series:-

SKU:6755cdf55027 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET 50V M113
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tube
  • Technology:MOSFET (Metal Oxide)
  • Frequency:175MHz
  • Gain:16dB
  • Voltage - Test:50 V
  • Current Rating (Amps):100µA
  • Noise Figure:-
  • Current - Test:100 mA
  • Power - Output:30W
  • Voltage - Rated:170 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:M113
  • Supplier Device Package:M113
  • Configuration:N-Channel

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VRF148A

Overview

The VRF148A is an RF MOSFET transistor manufactured by Microchip Technology. It is designed for high-power radio frequency applications, operating with a drain-source breakdown voltage of 170V and delivering significant output power at frequencies up to 175 MHz. The device features an N-channel configuration and utilizes silicon technology. It is housed in the M208 package, which supports surface mount or through-hole installation depending on the specific variant configuration. The component is rated for operation within a standard industrial temperature range, ensuring reliability in demanding electronic circuits.

Feature Summary

  • High power handling capability suitable for RF amplification stages
  • Operates at radio frequencies up to 175 MHz
  • N-channel silicon construction for robust performance
  • Designed for use in transmitter and amplifier modules

Applications

  • RF power amplifiers
  • Transmitter output stages
  • Industrial RF heating equipment
  • Communication system amplifiers

Procurement Notes

Verify the exact package type and pinout configuration against the official datasheet before integration, as variations may exist. Confirm that the supplier provides genuine Microchip Technology products with traceable documentation. Ensure thermal management solutions are adequate for the specified power dissipation levels during operation.

Selection Notes

Select this component when designing circuits requiring high voltage tolerance and substantial RF power output at UHF frequencies. Consider the thermal resistance characteristics of the M208 package for heat sinking requirements. Evaluate the gain and efficiency specifications relative to the target application's power budget and linearity needs.

Part Context

This part belongs to Microchip's portfolio of RF discrete semiconductors, specifically focusing on power MOSFETs for wireless infrastructure and industrial applications. It complements other RF components in signal chain designs where linear amplification and high power density are critical requirements for system performance.

Replacement Considerations

Consult the official datasheet for direct pin-compatible alternatives or functional equivalents from Microchip or other manufacturers. Verify that any substitute matches the 170V breakdown voltage, 175 MHz frequency limit, and package dimensions to ensure seamless integration without circuit redesign.

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