VRF151G

Overview

The VRF151G is an N-channel RF MOSFET transistor manufactured by Microchip Technology. It utilizes Silicon technology and operates at a frequency of 175 MHz with a gain of 16 dB. The device features a drain-source breakdown voltage (Vds) of 170 V and a continuous drain current (Id) of 36 A. It delivers an output power of 150 W and is housed in the M208 package.

Feature Summary

• N-channel silicon construction for RF applications
• High power output capability at 175 MHz
• Robust drain-source voltage rating

Applications

• RF power amplification circuits
• Broadband amplifier stages
• Industrial RF equipment

Procurement Notes

Verify the specific datasheet revision and electrical test conditions before integration, as parameters may vary between manufacturing lots or updates. Confirm that the M208 package thermal management requirements align with the system design to ensure reliable operation under the specified 150 W output power conditions.

Selection Notes

Select this component when a high-current RF MOSFET with 170 V breakdown is required for 175 MHz operations. Compare against the VRF151MP matched pair if balanced configurations are needed, noting differences in current ratings and packaging between the single device and the paired variant.

Part Context

This part belongs to the Microchip VRF series of high-voltage power discrete RF MOSFETs. These devices are designed for demanding radio frequency environments, offering a balance of high voltage handling and significant current capacity within specialized packages like the M208.

Replacement Considerations

Public confirmed substitute part numbers are not available.