VRF157FL

Overview

The VRF157FL is an N-channel RF MOSFET transistor manufactured by Microchip Technology. It utilizes Silicon (Si) technology and is housed in a T2 package. The device features a drain-source breakdown voltage of 170 V and a rated test voltage of 50 V. It supports a continuous drain current of 800 mA with a maximum output power of 600 W. The component operates at frequencies up to 80 MHz, providing a gain of 21 dB.

Feature Summary

• N-channel silicon RF MOSFET construction for high-frequency applications
• Capable of delivering 600 W output power at 80 MHz
• Designed with a T2 surface-mount package configuration

Applications

• RF power amplifier stages
• Broadband radio frequency circuits
• High-power RF signal generation systems

Procurement Notes

Verify the specific datasheet revision and product change notifications prior to procurement. Confirm that the T2 package dimensions align with the target PCB footprint. Ensure thermal management solutions are adequate for the specified 600 W power dissipation requirements during operation.

Selection Notes

Select this component when designing circuits requiring high power output at 80 MHz. The 170 V breakdown voltage suits moderate voltage supply rails. Verify gate drive compatibility and impedance matching networks for optimal 21 dB gain performance in the intended frequency band.

Part Context

This part belongs to the VRF157 series of RF MOSFET transistors from Microchip Technology. It is categorized under RF FETs and MOSFETs within the broader semiconductor portfolio. The device is distinct from matched pair variants like the VRF154FLMP due to its single-transistor configuration.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.