VRF164FL

Overview

The VRF164FL is an N-Channel RF MOSFET manufactured by Microchip Technology. It utilizes Silicon technology and features a screw mount installation style. Key electrical parameters include a drain-source breakdown voltage of 180 V, a continuous drain current of 75 A, and a maximum power dissipation of 1.75 kW. The device operates up to a maximum temperature of +200°C with a forward transconductance minimum of 20 mOhm.

Feature Summary

• Designed for high-frequency radio frequency applications
• Capable of handling significant power dissipation levels
• Constructed using silicon-based semiconductor technology

Applications

• Radio frequency power amplification circuits
• High-power RF signal generation systems
• Industrial radio frequency heating equipment

Procurement Notes

Verify the specific datasheet revision and manufacturer documentation before integration. Confirm that the screw mount package type aligns with your thermal management and mechanical design requirements. Ensure that the operating voltage and current limits are not exceeded in your final circuit design to maintain reliability.

Selection Notes

Select this component when designing circuits requiring high voltage tolerance and substantial current handling capabilities at radio frequencies. Consider the thermal resistance and mounting constraints associated with the screw mount package. Evaluate the gain characteristics against your system's amplification needs.

Part Context

This part belongs to the family of RF power MOSFETs produced by Microchip Technology. These components are engineered for robust performance in demanding RF environments. The VRF164FL represents a specific configuration within this lineup, optimized for high-voltage and high-power operations.

Replacement Considerations

Consult official Microchip documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' RF MOSFETs without rigorous electrical parameter matching and thermal analysis.