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Product Detailed Parameters
- Description：RF MOSFET 50V M177
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Frequency：150MHz
- Gain：25dB
- Voltage - Test：50 V
- Current Rating (Amps)：2mA
- Noise Figure：-
- Current - Test：250 mA
- Power - Output：300W
- Voltage - Rated：170 V
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：M177
- Supplier Device Package：M177
- Configuration：N-Channel
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Overview
The VRF2933MP is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain. It operates at 150 MHz with a drain-source breakdown voltage of 170 V and delivers 300 W output power. The device features a common source configuration, 25 dB typical gain at 30 MHz, and 70:1 load VSWR capability. The MP suffix specifies a matched pair where the gate-source threshold voltage (VGS(TH)) is matched between the two parts.
Feature Summary
- Gold-metallized silicon construction with nitride passivation
- High ruggedness with 170 V drain-source breakdown voltage
- Matched pair availability for balanced performance
- Thermally enhanced M177 package design
Applications
- Broadband commercial RF amplification
- Military RF power systems
- High-power amplifier stages requiring low intermodulation distortion
Procurement Notes
Verify the specific VTH range code marked on the device to ensure it matches the required threshold voltage specifications for your application. Confirm that the matched pair components are sourced together to maintain the specified electrical matching characteristics. Ensure handling procedures account for the beryllium oxide content in the ceramic portion of the package.
Selection Notes
Select the VRF2933MP when a matched pair is required for balanced circuit operation. Verify that the 170 V breakdown voltage meets the system's peak voltage requirements. Consider the thermal management needs associated with the M177 package and the 648 W total power dissipation rating. Ensure the operating frequency aligns with the device's 150 MHz specification.
Part Context
The VRF2933MP belongs to the VRF2933 family of high-voltage RF power MOSFETs manufactured by Microchip Technology. It serves as a high-voltage replacement for the SD2933. The device is part of Microchip's portfolio of discrete semiconductor products designed for demanding RF environments.
Replacement Considerations
The datasheet identifies the VRF2933MP as a high-voltage replacement for the SD2933. Verify pinout compatibility and thermal interface requirements before substitution.
FAQ
What does the 'MP' suffix indicate in the VRF2933MP part number?
The 'MP' suffix specifies that the device is sold as a matched pair where the gate-source threshold voltage (VGS(TH)) is matched between the two parts.
What is the maximum load VSWR capability of the VRF2933MP?
The device supports a 70:1 load VSWR capability at specified operating conditions without degradation in output power.
What material warning applies to the VRF2933MP package?
The ceramic portion of the device contains beryllium oxide, which is highly toxic when inhaled. Care must be taken during handling and mounting to avoid damaging this area.
