VRF3933

Overview

The VRF3933 is a gold-metallized silicon n-channel RF power vertical MOSFET designed for broadband commercial and military applications. It delivers 300W output power with typical gain of 22dB at 30MHz under 100V drain-source voltage conditions. The device features an improved ruggedness rating with a Drain-Source Breakdown Voltage (V(BR)DSS) of 250V. It supports continuous drain current up to 20A and total device dissipation of 648W at 25°C case temperature. Operating junction temperature reaches a maximum of 200°C, while storage temperature ranges from -65°C to 150°C.

Feature Summary

• Improved ruggedness with high Drain-Source Breakdown Voltage
• Excellent thermal stability and low inter-modulation distortion
• Nitride passivated with refractory gold metallization
• Available in matched pairs for push-pull configurations

Applications

• Broadband commercial RF power amplification
• Military RF power amplification
• High-power ISM frequency applications
• Large signal amplifier stages requiring high reliability

Procurement Notes

Verify the specific ordering suffix when purchasing to ensure correct gate threshold voltage matching if used in paired configurations. Confirm package type and lead finish compatibility with your assembly process. Check for RoHS compliance status as required by your manufacturing standards. Ensure proper handling procedures are followed due to electrostatic discharge sensitivity and beryllium oxide content in the ceramic substrate.

Selection Notes

Select this component for applications requiring high power density and wide bandwidth operation. Consider the M177 package dimensions for mechanical integration. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Verify input and output impedance matching networks against the provided typical large-signal impedance data for optimal performance at target frequencies.

Part Context

This transistor belongs to Microsemi's RF Power Vertical MOSFET series, specifically engineered for high-frequency power amplification. It serves as an improved replacement for legacy devices like the SD3933, offering enhanced breakdown voltage and ruggedness characteristics suitable for demanding RF environments.

Replacement Considerations

The datasheet explicitly identifies the VRF3933 as an improved replacement for the SD3933. Designers upgrading from the SD3933 should verify pinout compatibility and thermal interface requirements. Electrical parameters such as breakdown voltage and gain may differ, necessitating circuit re-evaluation.

FAQ

Is the VRF3933 available in matched pairs?

Yes, the device is available in matched pairs. Adding 'MP' to the part number specifies a matched pair where the Gate Threshold Voltage (VGS(TH)) is matched between the two components.

What is the maximum operating junction temperature?

The maximum operating junction temperature (TJ) for the VRF3933 is 200°C.

Does the device support load mismatch conditions?

Yes, the VRF3933 has a 3:1 Load VSWR capability at all phase angles without degradation in output power at specified operating conditions.