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The VRF3933MP is an N-channel RF power MOSFET manufactured by Microsemi Corporation, designed for broadband commercial and military applications requiring high power and gain. It features a gold-metallized silicon construction housed in the M177 package. Key electrical parameters include a test voltage of 100V, a continuous drain current rating of 20A, and a maximum operating frequency of 30MHz. The device delivers 350W of output power with a gain of 28dB at a test current of 250mA.
Verify the manufacturer designation carefully as sourcing data indicates both Microsemi Corporation and Microchip Technology references for this part number. Confirm the specific datasheet version matches the required electrical characteristics, particularly regarding the M177 package dimensions and pinout configuration. Ensure compliance with any applicable export control classifications such as EAR99 if relevant to your region.
Select this component when a high-output power level of 350W is required within a 30MHz operational bandwidth. The M177 package necessitates specific thermal management solutions due to the power dissipation profile. Compare against similar models like the VRF2933MP if higher frequency operation up to 150MHz is needed, noting that the VRF3933MP prioritizes lower frequency high-power delivery.
This component belongs to the family of high-voltage power discrete transistors from Microsemi. It serves as a robust solution for RF stages where stability and power handling are critical. The M177 package provides a standardized form factor for mounting in industrial and defense-grade amplifier modules, ensuring compatibility with existing mechanical designs.
Public confirmed substitute part numbers are not available in the provided documentation.