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Product Detailed Parameters
- Description：IGBT MOD 1200V 182A INT-A-PAK
- Series：-
- Mfr：Vishay General Semiconductor - Diodes Division
- Package：Bulk
- IGBT Type：-
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：3V @ 15V, 100A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：INT-A-Pak
- Supplier Device Package：INT-A-PAK
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：182 A
- Power - Max：520 W
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：18.67 nF @ 30 V
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Overview
The VS-GA100TS120UPbF is a Generation 4 IGBT half-bridge module utilizing INT-A-PAK packaging. It features a collector-emitter voltage (VCES) of 1200 V and a continuous collector current (IC DC) of 182 A at 25 °C, dropping to 100 A at 93 °C. The typical on-state voltage (VCE(on)) is 2.25 V at 100 A and 25 °C. The integrated antiparallel diode exhibits an ultrasoft recovery characteristic with a maximum forward voltage (VFM) of 4.0 V at 100 A. Switching parameters include a total switching energy (Ets) of 14.4 mJ at 25 °C and 26.4 mJ at 125 °C under specified test conditions.
Feature Summary
- Generation 4 IGBT technology optimized for high-speed hard switching up to 40 kHz and resonant modes exceeding 200 kHz.
- Integrated HEXFRED® antiparallel diodes providing ultrasoft recovery characteristics to minimize electromagnetic interference.
- INT-A-PAK package design enabling direct mounting to heatsinks for efficient thermal management.
Applications
- Uninterruptible Power Supplies (UPS)
- Switched Mode Power Supplies (SMPS)
- Industrial welding equipment
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm compliance requirements such as lead-free status. Ensure that the intended application environment remains within the specified operating junction temperature range of -40 °C to +150 °C. Confirm mechanical mounting torque specifications to maintain proper thermal interface integrity between the module case and the heatsink.
Selection Notes
Select this component based on the required voltage rating of 1200 V and the necessary current handling capabilities for the target power conversion topology. Evaluate the thermal resistance values provided in the datasheet to determine appropriate heatsinking solutions. Consider the switching energy losses relative to the operating frequency to ensure system efficiency meets design targets.
Part Context
This device belongs to Vishay's INT-A-PAK family of ultrafast IGBT modules. It represents a specific configuration within the Generation 4 product line, designed to offer low conduction and switching losses. The module integrates both the IGBT switch and the antiparallel diode into a single industrial-grade package.
Replacement Considerations
Consult official Vishay documentation for confirmed substitute part numbers. Verify compatibility regarding pinout configuration, thermal resistance characteristics, and electrical ratings before implementing any alternative components in existing designs.
