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The VS-GB50YF120N is an N-channel IGBT module manufactured by Vishay General Semiconductor - Diodes Division. It features a dual half-bridge configuration housed in an ECONO2 package with 49 pins for PCB installation. The device supports a maximum collector-emitter voltage (VCEO) of 1200 V and a continuous collector current (Ic) of 100 A at 25 °C. Maximum power dissipation is rated at 480 W, with a maximum gate-emitter voltage of ±20 V. Operating temperatures range from -40 °C to +150 °C, and the module is designed for switching frequencies between 8 kHz and 60 kHz.
Verify the specific ordering suffix against the manufacturer's latest datasheet to confirm pinout compatibility and electrical ratings. Ensure that the procurement channel provides original components with traceable documentation to prevent counterfeit risks. Cross-reference the part number with official Vishay databases before finalizing purchase orders.
Select this component for designs requiring a robust 1200 V, 100 A dual half-bridge solution. The ECONO2 form factor simplifies layout compared to discrete assemblies. Verify that the application's thermal management system can handle the 480 W power dissipation rating within the specified operating temperature range.
This module belongs to Vishay's HEXFRED and IGBT product portfolio, targeting high-power industrial applications. It complements other Vishay semiconductors by providing integrated switching solutions. The ECONO2 series is widely recognized for its reliability and ease of integration into medium-voltage power electronics architectures.
Consult Vishay's official cross-reference guides for verified substitutes. Potential alternatives may include updated revisions within the same ECONO2 family or comparable modules from other manufacturers with identical pinouts and electrical specifications.