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The VS-GT150TS065S is a half bridge IGBT module utilizing Trench IGBT technology and Gen4 FRED Pt® anti-parallel diodes. It features an INT-A-PAK package with Al2O3 DBC for low thermal resistance. Key electrical parameters include a collector-emitter voltage (VCES) of 650 V, continuous collector current (IC DC) of 280 A at TC = 80 °C, and terminal level VCE(on) of 1.07 V at 150 A and 25 °C. The device supports junction temperatures up to 175 °C and includes UL approval file E78996.
Verify the specific revision date on the datasheet document number 97061 before finalizing designs. Confirm that the INT-A-PAK mechanical dimensions match the target PCB or heatsink layout. Ensure gate drive voltages remain within the specified ±20 V RMS limit to prevent insulation breakdown.
Select this component when low conduction losses are critical for high current applications. The standard speed variant is suitable for frequencies up to 1 kHz. Evaluate thermal impedance curves against the expected duty cycle to ensure junction temperature remains below 175 °C under peak load conditions.
This part belongs to Vishay's INT-A-PAK series of half bridge modules. It is designed to replace older industrial standard packages while offering improved thermal performance through its Al2O3 DBC substrate. The module integrates a Trench IGBT switch with a complementary fast recovery diode.
Check mechanical compatibility with existing 34 mm industrial standard footprints if retrofitting. Verify that the new gate charge requirements align with the existing driver circuit capabilities.