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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 0.1A VMT6
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate, 1.2V Drive
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：100mA
- Rds On (Max) @ Id, Vgs：3.5Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：7.1pF @ 10V
- Power - Max：120mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-SMD, Flat Leads
- Supplier Device Package：VMT6
- Grade：-
- Qualification：-
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Overview
The VT6K1T2CR is a small signal dual N-channel MOSFET manufactured by ROHM Semiconductor. It features a Vds of 20V and an Id of 100mA with a maximum power dissipation of 120mW to 150mW. The device utilizes a VMT6 surface mount package, offering a gate-source threshold voltage of 1V and a typical input capacitance of 7.1pF at 10V. Designed for low-power applications, it supports operation within a temperature range extending up to +150°C junction temperature.
Feature Summary
- Dual N-Channel configuration in a compact SMD package
- Low gate-source threshold voltage for efficient drive compatibility
- High-speed switching capability with minimal input capacitance
- Enhanced thermal stability suitable for high-temperature environments
Applications
- Signal switching in portable consumer electronics
- Battery protection circuits in mobile devices
- Low-voltage logic level translation interfaces
- Power management units in embedded systems
Procurement Notes
Verify the specific power dissipation rating (120mW vs 150mW) against the latest official datasheet revision prior to procurement. Confirm that the VMT6 package variant matches the required footprint for PCB layout. Ensure compliance with RoHS directives as specified in the manufacturer's documentation. Cross-reference the part number suffixes to guarantee exact electrical parameter alignment with design requirements.
Selection Notes
Select this component when a dual N-channel MOSFET with a 20V breakdown voltage is required for space-constrained designs. The low threshold voltage makes it suitable for direct interfacing with low-voltage logic controllers. Consider the 100mA current limit for load requirements. The VMT6 package offers a balance between thermal performance and board area efficiency compared to larger packages.
Part Context
This part belongs to ROHM's small signal MOSFET array series, designed for general-purpose switching applications. It complements other variants in the family that may offer different voltage or current ratings. The VMT6 package is standardized across several ROHM transistor arrays, facilitating consistent design practices for multi-channel switching solutions in compact electronic assemblies.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical parameters if considering alternative manufacturers' dual N-channel MOSFETs in the 20V/100mA class.
