W63AH6NBVADE TR

Memory IC Overview

The Winbond W63AH6NBVADE TR is a 1Gb LPDDR3 SDRAM device featuring an 8-bank architecture and double data rate Command/Address bus interface. It supports x16 and x32 data widths with HSUL_12 signaling for low power consumption. The component operates within a temperature range of -40°C to +85°C and utilizes a 178-VFBGA package.

Memory IC Feature Summary

• Supports Partial Array Self-Refresh (PASR) for optimized power management
• Includes On-Die Termination (ODT) for signal integrity
• Features CA Training and Write Leveling modes

Memory IC Applications

• Mobile computing platforms
• Smartphones and tablets
• Embedded industrial systems

Memory IC Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type, temperature grade, and delivery format. Confirm RoHS compliance status and lead times directly with the manufacturer or authorized distributors before finalizing procurement plans.

Memory IC Selection Notes

Select this component for designs requiring high-density mobile memory with low power profiles. Ensure the system supports LPDDR3 initialization sequences and provides appropriate voltage rails for VDD1 and VDD2 operation.

Memory IC Part Context

This part belongs to the W63AHxNB series of LPDDR3 devices manufactured by Winbond Electronics. It is designed for mobile applications requiring high bandwidth and energy efficiency in a compact form factor.

Memory IC Replacement Considerations

Consult the official datasheet for compatible pin-to-pin alternatives within the same family. Verify electrical characteristics and timing parameters match the original design requirements.