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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 91A TO-247-3
- Series：-
- Mfr：WeEn Semiconductors
- Package：Bulk
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：91 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 50A
- Power - Max：278 W
- Switching Energy：1.7mJ (on), 600µJ (off)
- Input Type：Standard
- Gate Charge：160 nC
- Td (on/off) @ 25°C：66ns/163ns
- Test Condition：400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr)：105 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The WG50N65DHJQ is a single silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by WeEn Semiconductors. It utilizes Trench Field-stop technology and includes a built-in diode. The device features a collector-emitter maximum voltage (VCEO) of 650 V and a continuous collector current of 91 A at 25°C. Typical saturation voltage (VCE(sat)) is 1.65 V, with a gate-emitter voltage range of -20 V to +20 V. Power dissipation is rated at 278 W. Operating temperature ranges from -55°C to +150°C. It is housed in a TO-3PF-3 package for through-hole mounting.
Feature Summary
- Integrates advanced Fine Trench Field-stop IGBT technology to optimize the balance between conduction and switching losses.
- Includes a built-in diode to simplify circuit design and reduce component count.
- Designed for high-efficiency power conversion applications requiring robust thermal performance.
Applications
- Power converters
- Induction heating systems
Procurement Notes
Verify the specific ordering suffix and marking orientation against official datasheets before procurement. Confirm availability status with authorized distributors as supply may be restricted in certain regions. Ensure the TO-3PF-3 package dimensions match the target PCB footprint requirements.
Selection Notes
Select this component for designs requiring a 650 V rating with high current capacity up to 91 A. Consider the 278 W power dissipation limit and ensure adequate heatsinking for the TO-3PF-3 package. Verify that the application operates within the specified -55°C to +150°C junction temperature range.
Part Context
This part belongs to the WeEn Semiconductors IGBT portfolio utilizing Trench Field-stop technology. It is distinct from other variants like the WG50N65HFR1 which uses a TO-247-4L package. The DHJQ suffix indicates specific packaging and marking configurations compared to standard versions.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-reference with other 650 V, 50 A class IGBTs in TO-3PF packages only if electrical parameters and pinouts are verified identical.
