WP28020015

$35.59

Description：RF MOSFET GAN HEMT 28V DIE
Series：-

SKU:2790ec7e67ec Category: RF FETs, MOSFETs Brand: WAVEPIA.,Co.Ltd

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Product introduction

Product Detailed Parameters

Description：RF MOSFET GAN HEMT 28V DIE
Series：-
Mfr：WAVEPIA.,Co.Ltd
Package：Box
Technology：GaN HEMT
Frequency：15GHz
Gain：10dB
Voltage - Test：28 V
Current Rating (Amps)：880mA
Noise Figure：-
Current - Test：300 mA
Power - Output：15W
Voltage - Rated：28 V
Grade：-
Qualification：-
Mounting Type：-
Package / Case：Die
Supplier Device Package：Die
Configuration：-

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WP28020015

Overview

The WP28020015 is a bare-die Gallium Nitride High Electron Mobility Transistor (GaN HEMT) manufactured by WAVEPIA Co., Ltd. It operates at a drain voltage of 28V with a breakdown voltage exceeding 100V. The device supports operation up to 20 GHz and delivers a typical saturated output power of 15W at 8.15 GHz, accompanied by a small signal gain of 10.0 dB. Key electrical parameters include a threshold voltage of -3.2V, a maximum drain-source current of 1050 mA/mm, and a peak transconductance of 340 mS/mm. At 8.15 GHz, the drain efficiency exceeds 40% with an intermodulation distortion below -30 dBc.

Feature Summary

High breakdown voltage capability exceeding 100V for robust operation
Supports RF operation up to 20 GHz frequency range
Designed for high efficiency and reliability monitoring

Applications

U/VHF amplifiers
Broadband amplifiers
Base station communications
Drone and UAV systems
Radar applications

Procurement Notes

Verify the specific revision level against the latest official datasheet before procurement, as specifications may change without notice. Confirm that the received component matches the bare-die format and packaging requirements specified in the assembly guide. Ensure compatibility with recommended AuSn soldering procedures and thermosonic bonding methods during integration.

Selection Notes

Select this component for designs requiring high power density and wide bandwidth in the UHF to microwave spectrum. The 28V operating voltage and high breakdown rating suit high-power amplifier stages. Evaluate thermal management needs carefully, considering the junction-to-case thermal resistance and the requirement for gold wire connections to ensure reliable performance under high-frequency conditions.

Part Context

This part belongs to the WAVEPIA GaN HEMT die family, specifically engineered for high-power RF applications. The naming convention indicates a 28V drain voltage, DC to 20 GHz frequency range, and 15W output power capability. As a bare die, it requires custom mounting and bonding solutions rather than standard packaged transistor interfaces.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Direct replacement requires matching the die dimensions (2385 x 701 microns), pad configurations, and electrical characteristics precisely.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.