WP2806015UH

Overview

The WP2806015UH is an unmatched Gallium Nitride High Electron Mobility Transistor (GaN HEMT) designed for high-power RF applications. It operates up to 6 GHz with a drain-source breakdown voltage of 160 V and a typical operating voltage of 28 V. At 4.6 GHz, the device delivers a small signal gain of 12.7 dB, a saturated output power (PSAT) of 21.6 W, and a pulsed drain efficiency of 56.1% at PSAT. The component supports a maximum forward gate current of 30 mA and a maximum drain current of 1 A. It is available in surface mount (S) and through-hole (H) packages.

Feature Summary

• High Power Density: Delivers over 21 W of saturated output power with high drain efficiency in a compact form factor.
• Broadband Operation: Supports frequency ranges up to 6 GHz, suitable for multi-band infrastructure.
• Robust Mismatch Tolerance: Maintains no damage under 10:1 VSWR conditions across all phase angles.
• High Voltage Capability: Rated for 160 V drain-source breakdown and 28 V standard operation.

Applications

• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• WiMAX, LTE, WCDMA, GSM Systems
• Radar Applications

Procurement Notes

Verify the package suffix when ordering: 'S' denotes surface mount and 'H' denotes through hole. Confirm that the specific version matches the required mounting style for your PCB design. Ensure thermal management meets the 225°C junction temperature limit for reliable long-term operation.

Selection Notes

Select this component for designs requiring high linearity and power density in the sub-6 GHz range. The unmatched configuration requires external matching networks. Evaluate the 10:1 VSWR tolerance if the load environment may present significant impedance mismatches during operation.

Part Context

This part belongs to WAVEPIA's GaN HEMT portfolio, specifically engineered for solid-state RF module designers. The naming convention indicates a 28V drain voltage, DC to 6GHz frequency range, and approximately 15W output capability class. It serves as a core active element for high-efficiency power amplification.

Replacement Considerations

No public substitute part numbers are documented in the official datasheet. Direct replacement requires verifying pinout compatibility, thermal resistance, and RF performance parameters against the original design requirements.

FAQ

What is the maximum VSWR the device can withstand?

The WP2806015UH can withstand a 10:1 Output Mismatch Stress (VSWR) at all phase angles without damage when operated at 2W CW output.

How does the package type affect the model number?

The suffix indicates the mounting style: 'S' represents Surface Mount (Package Type 360BS), while 'H' represents Through Hole (Package Type 360BH).

What is the typical drain efficiency at saturated power?

At 4.5 GHz and PSAT, the typical pulsed drain efficiency is 60.7%. Under standard test conditions at 4.6 GHz, it is 56.1%.