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Product Detailed Parameters
- Description：RF MOSFET GAN HEMT 48V DIE
- Series：-
- Mfr：WAVEPIA.,Co.Ltd
- Package：Box
- Technology：GaN HEMT
- Frequency：8GHz
- Gain：12dB
- Voltage - Test：48 V
- Current Rating (Amps)：800mA
- Noise Figure：-
- Current - Test：250 mA
- Power - Output：30W
- Voltage - Rated：48 V
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：Die
- Supplier Device Package：Die
- Configuration：-
Download product information
Overview
The WP48007025 is a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) die manufactured by WAVEPIA Co., Ltd. It operates at a drain voltage of 48V with a typical saturated output power of 30W at 5.8GHz and small signal gain of 14.0dB at 3.5GHz. The device supports operation up to 7GHz, featuring high breakdown voltage and efficiency. Key electrical parameters include a threshold voltage of -3.4V, maximum drain-source current of 1000mA/mm, and peak transconductance of 290mS/mm. The die dimensions are 1800 x 868 microns with a thickness of 100 microns.
Feature Summary
- High breakdown voltage capability for robust RF performance
- Supports reliability monitoring functions
- Optimized for high efficiency in broadband amplification
Applications
- UHF/VHF Amplifiers
- Base Station Communications
- Drone and UAV Systems
- WiMAX, LTE, WCDMA, GSM Networks
- Radar Applications
Procurement Notes
Verify the specific revision level against the latest official datasheet before procurement. Confirm that the bare die packaging format matches assembly requirements, as units are shipped in wafer-level or Gel-Pak containers. Ensure compatibility with recommended AuSn soldering procedures and thermosonic bonding methods specified by the manufacturer.
Selection Notes
Select this component for designs requiring 48V GaN HEMT solutions operating up to 7GHz. Consider the 1800 x 868 micron die size for thermal management and layout constraints. Verify that the application circuit can support the required bias conditions of 48V drain voltage and appropriate gate biasing for the desired power and gain characteristics.
Part Context
This part belongs to the WAVEPIA RF semiconductor portfolio, specifically designed for solid-state RF module applications. It utilizes advanced GaN technology to provide high power density and reliability. The product line targets diverse form factors and applications requiring high-performance broadband amplification and efficient signal processing.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Evaluate alternative GaN HEMT dies based on matching 48V operation, similar frequency range up to 7GHz, and comparable output power levels.
