WP4806025UH

Overview

The WP4806025UH is an unmatched Gallium Nitride High Electron Mobility Transistor (GaN HEMT) designed for broadband RF power amplification. It operates with a drain voltage of 48V and supports frequencies up to 6GHz. At 2.45GHz, the device delivers a typical small-signal gain of 19.6dB, a saturated output power (PSAT) of 45.3dBm, and a pulsed drain efficiency of 68.5%. The component features a 160V drain-source breakdown voltage and a maximum operating junction temperature of 225°C. It is available in a 360BH through-hole package.

Feature Summary

• High-power GaN HEMT technology supporting up to 6GHz operation
• Unmatched configuration for flexible impedance matching networks
• Robust thermal performance with a 225°C maximum junction temperature rating
• 48V drain supply capability with high saturation output power

Applications

• Cellular infrastructure base stations
• Broadband signal test instrumentation
• Radar systems
• WiMAX, LTE, WCDMA, and GSM transmitters

Procurement Notes

Verify the specific suffix designation when ordering, as 'H' indicates the through-hole 360BH package while 'S' denotes surface mount. Confirm that the procurement specification aligns with the required thermal management capabilities for the 225°C junction temperature limit. Ensure the design accounts for the unmatched nature of the transistor, requiring external matching components for optimal performance.

Selection Notes

Select this component for applications requiring high linearity and efficiency in broadband environments. The 48V supply requirement dictates the biasing circuit design. Designers must implement appropriate heat sinking to maintain the junction temperature within the 225°C absolute maximum rating during continuous or pulsed operation. Consider the 360BH package dimensions for PCB layout constraints.

Part Context

This part belongs to the WAVEPIA GaN HEMT family, specifically engineered for high-frequency power amplification. The model number structure indicates a 48V drain voltage, DC to 6GHz frequency range, and 25W output power capability. The 'U' designation confirms it is an unmatched device, distinguishing it from matched pairs used in balanced amplifier topologies.

Replacement Considerations

No public substitute part numbers are documented in the provided datasheet. Replacement requires verifying pinout compatibility, electrical parameters such as VBR and PSAT, and thermal characteristics against the original design requirements.